AlGaInP高亮度发光二极管  

High Brightness AlGaInP Orange Light Emitting Didoes

作　　者：李玉璋[1] 王国宏[1] 马骁宇[1] 曹青[1] 王树堂[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体所

出　　处：《液晶与显示》1999年第2期110-114,共5页Chinese Journal of Liquid Crystals and Displays

基　　金："八六三"项目

摘　　要：分析了ＡｌＧａＩｎＰ材料的特点和ＡｌＧａＩｎＰ高亮度发光二极管发光效率的决定因素，对目前国际上研究比较成熟的一些典型结构进行了综合分析，从理论上指出ＡｌＧａＩｎＰ发光二极管在橙黄波段的发光效率的最终决定因素是光的提取效率，而在黄绿波段是发光二极管的内量子效率。并利用ＬＰ－ＭＯＣＶＤ技术制备了ｃｄ级橙黄高亮度发光二极管，发光波长峰值在６０５ｎｍ，ＦＷＨＭ为１８．３ｎｍ，２０ｍＡ工作电流下，５．０８ｃｍ（２英寸）外延片管芯平均轴向发光强度为２０ｍｃｄ，最大３０ｍｃｄ，平均工作电压１．９Ｖ，透明峰值角度２θ１／２＝１５°时轴向发光强度达到１０００ｍｃｄ。Properties of AlGaInP material and determinants of luminescence efficiency of AlGaInP LED were analyzed, some typical structure were comprehensively reported The determinants of luminescence efficiency of AlGaInP LED are light extraction efficiency at yellow orange color and internal quantum efficiency at yellow green color High bightness AlGaInP LEDs were fabricated by LP MOCVD, under 20mA operation current the LEDs emitting wavelength was 605nm with 18 3nm FWHM, brightness of the LED chips and LED lamps with 15° viewing angle (2 θ 1/2 ) reached 30mcd and 1000mcd respectively

关 键 词：发光二极管 低压 有机金属 气相外延 铝镓铟磷 

分 类 号：TN364.2[电子电信—物理电子学]