下一代光刻技术的EUV光源收集系统的发展  

Development of EUV source collectors for next generation lithography

作　　者：左保军[1] 祝东远[1] 张树青[1] 李润顺[1] 

机构地区：[1]哈尔滨工业大学空间光学工程研究中心,黑龙江哈尔滨150001

出　　处：《激光与红外》2010年第11期1163-1167,共5页Laser & Infrared

摘　　要：当前半导体器件加工水平正在向22 nm方向发展,而最有希望实现这一尺寸的光刻技术即为EUV光刻技术。EUV光源所发出的13.5 nm辐射因为波长极短,物质对其吸收十分强烈,所以使采用透射式光学系统对辐射进行收集的可能几乎为零。如何高效地收集EUV光源发出的辐射能成为了EUV光刻技术中的一大难题。本文主要介绍了国外在EUV光源收集系统方面的发展现状,描述了两大类EUV光源收集系统(垂直入射式和掠入射式)的一些设计形式和设计实例,并对各种设计形式的EUV收集系统进行了分析和比较。还重点介绍了目前被普遍看好的内嵌式掠入射WolterⅠ型收集系统的设计与加工等情况。At present,the semiconductor chips′ processing is developing toward 22 nm.The most probable method to achieve this size is EUV Lithography.The light emitted from EUV sources is very short（13.5 nm）,and most of substances would absorb this radiation strongly,so using the transmission optics to collect the radiation is impossible.How to collect the radiation emitted from EUV sources efficiently becomes a big problem in EUV Lithography.This paper presents two kinds of EUV source Collector,near normal incidence collector and grazing incidence collector,and some designs or instances of them.Emphasis is put on the introduction about the nested grazing incidence Wolter Ⅰ Collector.

关 键 词：光刻 EUV 垂直入射式 掠入射式 收集效率 内嵌式 WolterⅠ型 

分 类 号：TN305.7[电子电信—物理电子学]