超突变结变容管的设计模型  

Design Model of Hyperabrupt Varactor Diodes

作　　者：钱刚[1] 郝达兵[1] 顾卿[1] 

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《半导体技术》2010年第12期1158-1161,共4页Semiconductor Technology

摘　　要：通过建立一种超突变结变容二极管的杂质浓度分布模型,并基于求解一维泊松方程、雪崩击穿条件方程和电阻计算公式,推导了该模型的C-V特性、VBR、RS和Q值,设计了用于分析该模型的模拟软件,阐述了模拟软件的运行流程。基于该模型和模拟软件,采用外延-扩散的方法研制了一种硅超突变结变容二极管,采用C-V法测量了外延材料的杂质浓度分布,结果表明材料的浓度分布与模拟结果相符。研制的变容二极管的主要参数：击穿电压VBR为50~55 V;电容变化比（C-4V/C-8V）为2.42~2.44;VR=-4 V,f=50 MHz时的品质因素Q为150~180,实测参数与模拟结果吻合得很好。设计模型和模拟软件得到了验证。A doping profile model used to design hyperabrupt varactor diodes was estabished.The C-V characteristic,the breakdown voltage VBR,the series resistance RS and the quality factor Q from resolving one dimensional Poisson Equation,avalanche breakdown condition equation,resistance calculating formula were derived.The software was designed for the analysis of this model,and the process of the software was described.A group of silicon hyperabrupt varactor diodes designed with this software were fabricated by diffusion on thin epitaxial layers.The doping profile of the epitaxial layers was measured by C-V measurement.The simulated results have a satisfactory agreement with the measured results.The diodes have a breakdown voltage VBR of 50-55 V at 1 μA,a capacitance ratio of 2.42-2.44 over a voltage range of 4-8 V（C-4V/C-8V=2.42～2.44）,and a quality factor Q of 150180 at an operating level of-4 V and 50 MHz.These measurements show an excellent correlation with simulated results.The doping profile model and the software were proved to be correct.

关 键 词：超突变结 外延-扩散法 C-V特性 击穿电压 品质因素 

分 类 号：TN312.1[电子电信—物理电子学]