耐250°C高温的1200V-5A 4H-SiC JBS二极管  

1200 V,5 A 4H-SiC JBS Working at 250°C

作　　者：倪炜江[1] 李宇柱[1] 李哲洋[1] 李赟[1] 陈辰[1] 陈效建[1] 

机构地区：[1]南京电子器件研究所单片集成电路和模块国家级重点实验室,南京210016

出　　处：《固体电子学研究与进展》2010年第4期478-480,549,共4页Research & Progress of SSE

摘　　要：采用碳化硅外延和器件工艺制造了碳化硅结势垒肖特基(JBS)二极管,耐压达到1200V,封装的器件电流室温达到5A(正向压降2.1V)。通过在不同工作温度下对比测试显示了直流特性随工作温度的变化情况,并验证至少在250°C下依旧能正常工作。研制的1 200 V碳化硅JBS二极管和IXYS公司的600V硅快恢复二极管(Fastrecovery diode)进行了对比:室温动态开关测试中,碳化硅二极管的反向恢复能耗比硅二极管节省92%。这是国内首次报道的250°C高温下正常工作的碳化硅JBS二极管。1 200 V 4H-SiC junction barrier Schottky（JBS） diodes were designed and fabricated based on in-house SiC epitaxy and device technology.SiC JBS diodes were packaged and their forward current was 5 A at room temperature with forward voltage drop of 2.1 V.After measuring the I-V characteristics at different temperature,we verified SiC JBS diodes can work at 250°C at least.Switching measurements were compared with IXYS fast recovery diode.SiC diode achieved reduces 92% recovery loss.This is the first report of a SiC JBS diode which can be operated at high temperature up to 250°C in China.

关 键 词：4H碳化硅 结势垒肖特基二极管 快恢复二极管 

分 类 号：TN311.8[电子电信—物理电子学] TN304.054