聚焦离子束淀积铂薄膜性质的研究  

Characterization of Platinum Films Deposited by Focused Ion Beam

作　　者：陈忠浩[1] 宋云[1] 曾韡[1] 李越生[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《固体电子学研究与进展》2010年第4期615-619,共5页Research & Progress of SSE

摘　　要：聚焦离子束(FIB)淀积Pt薄膜是FIB集成电路修改的基本手段之一。对FIB不同束流下淀积的Pt薄膜的性质,如厚度、体积、淀积速率、成份以及电阻进行了较全面的研究。离子束流的增大使Pt薄膜体积下降,而淀积速率逐渐上升;Pt薄膜的主要成份为C,占三分之二左右,Pt含量约为30%;当辅助反应气体流量不变时,Pt的含量随离子束流的增大而增加,C的含量则随之减少;薄膜的电阻比纯净Pt要大得多。据此给出了IC电路修改时较好的淀积条件,在IC产业的设计和制造中有较强应用价值。Deposition of Pt thin film using focused ion beam（FIB） is the basic method of IC modification.Characterization of platinum films deposited by FIB using different ion beam current has been investigated in this paper.The thickness and volume of Pt films decreased with increasing ion current,but deposition rate increased.About 70% contents of the films were carbon and gallium,and atomic concentration of platinum was only 30%.Increasing ion current at constant precursor flux increases Pt content,while decreasing C content of the films.Resistance of thin film was much lager than pure platinum.The beat conditions were given in this work.

关 键 词：聚焦离子束 铂薄膜 淀积 离子束流 

分 类 号：TN305.92[电子电信—物理电子学]