铜线键合的抗氧化技术研究  

Study of Anti-Oxidation Technology for Copper Wire Bonding

作　　者：范象泉[1] 王德峻 从羽奇 张滨海[1] 王家楫[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]日月光封装测试(上海)有限公司,上海201203

出　　处：《半导体技术》2011年第1期17-21,共5页Semiconductor Technology

摘　　要：在铜线键合的过程中通入惰性保护气体,或在纯铜线表面涂覆金属钯防氧化层都可以改善铜线键合的抗氧化性能。为了评价上述两种方法对铜线键合抗氧化性能的改进情况,使用先进的材料表征方法分析不同保护气体流量情况下键合形成的金属熔球的形貌,金属熔球表面的氧原子数分数和表面氧化层的厚度。研究表明,保护气体流量为0.51 L/min时,可以在保证成本较低的情况下获得最佳的抗氧化效果。通过XPS和TEM分析发现,铜线表面涂覆金属钯可以延长铜线的存储寿命,降低键合界面的氧含量,提高键合的可靠性。The anti-oxidation property of copper wire bonding can be improved by injecting forming gas containing reducibility or plating anti-oxidation coating on 4N pure copper wires. In order to evaluate the improvement of these two methods, an advanced material analysis tool was used to characterize the free air ball surface topography, surface oxide contamination and surface oxide thickness. The results show that the best anti-oxidation effect is obtained at the forming gas flow rate of 0.51 L/min. The anti- oxidation property of palladium coated wire was characterized by XPS and TEM. The results show that the copper wire with palladium plated can extend the storage life of the copper wire, decrease the bonding interface oxygen concentration and improve the bonding reliability.

关 键 词：引线键合 铜线 氧化 镀钯 保护气体 

分 类 号：TN305.93[电子电信—物理电子学]