帽子层对势垒层掺杂的GaN基HEMT电学性能影响模拟  

Simulation of the Effect of Cap Layer on Electrical Properties of Doped Barrier Layer GaN-Based HEMT

作　　者：张佳丽[1] 袁宁一[1,2] 叶枫[1] 丁建宁[1,2] 

机构地区：[1]常州大学低维材料微纳器件及系统研究中心,江苏常州213164 [2]常州市新能源重点实验室,江苏常州213164

出　　处：《常州大学学报（自然科学版）》2010年第4期1-5,共5页Journal of Changzhou University：Natural Science Edition

摘　　要：研究了势垒层掺杂的GaN基HEMT结构上的帽子层对该器件电学特性的影响。并对i-AlGaN,i-GaN,i-InGaN3种不同材料的帽子层进行比较。从模拟结果可知,i-AlGaN帽子层虽然提高了GaN基HEMT的阈值电压,但同时也提高了跨导和最大漏源饱和电流,在GaN基HEMT器件设计和工艺制造过程中选取i-AlGaN作为帽子层对于提高器件的电学性能来说具有一定的指导意义。The cap layer was added to a GaN-based HEMT of doped barrier layer using ISE TCAD software.The impact on electrical properties of GaN-based HEMT about the cap layer were studied.And the impact on the properties of HEMT about the i-AlGaN,i-GaN,i-InGaN cap layers were compared.The simulation results show that the i-AlGaN cap layer not only improved the threshold voltage of GaN-based HEMT,but improved the transconductance and maximum drain-source saturation current.In the manufacturing process and device design,it is great positive significance to select i-AlGaN cap layer to improve the electrical properties of GaN-based HEMT.

关 键 词：ALGAN/GAN HEMT 器件模拟 输出特性 转移特性 

分 类 号：O47[理学—半导体物理]