耗尽区调制对氢化MILC Poly-Si TFT热产生漏电的影响  

The Impact of the Depletion Region Modulation on the Thermally Generated Leakage Current of MILC Poly-Si TFT

作　　者：朱臻[1] 

机构地区：[1]华东师范大学信息科学技术学院电子工程系,上海200241

出　　处：《微电子学与计算机》2011年第2期43-46,共4页Microelectronics & Computer

摘　　要：研究了热载流子应力下耗尽区调制效应对氢化金属诱导横向结晶多晶硅薄膜晶体管热产生漏电的影响.从理论上论证了热载流子应力下氢化金属诱导横向结晶多晶硅薄膜晶体管热产生漏电中的耗尽区调制效应的存在.并利用正、反向测量模式,从实验上进一步确认这种效应对氢化金属诱导横向结晶多晶硅薄膜晶体管热产生漏电的影响.发现在热载流子应力下,正、反向测量模式时,氢化金属诱导横向结晶多晶硅薄膜晶体管热产生漏电均随应力时间的增加而减小.但由于漏极和源极附近沟道区的表面势受热空穴注入影响的程度不同,热载流子应力下,正、反向测量模式的热产生漏电减小程度不同.理解热载流子应力下耗尽区调制效应对氢化金属诱导横向结晶多晶硅薄膜晶体管热产生漏电的影响,有助于成功设计电路.The depletion region modulation effect on the thermally generated leakage current of hydrogenated metal-induced laterally crystallized polycrystalline silicon thin film transistors under the hot-carrier stress has been studied.The depletion region modulation effect on the thermally generated leakage current of the hydrogenated ones under the hot-carrier stress is proved theoretically.At the same time,this effect on the thermally generated leakage current of hydrogenated metal-induced laterally crystallized polycrystalline silicon thin film transistors is confirmed by the forward and reverse measurement modes in experiments.And it is found that the thermally generated leakage current of the hydrogenated ones all decreases with the stress time evolution in both modes.However,due to the different influence of the hot holes′ injection on the surface potentials of the channel near the drain and source,the decrease of the thermally generated leakage current appears different in the forward and reverse measurement modes under the hot-carrier stress.Understanding the depletion region modulation effect on the thermally generated leakage current of hydrogenated metal-induced laterally crystallized polycrystalline silicon thin film transistors under the hot-carrier stress is helpful for designing circuits.

关 键 词：金属诱导横向结晶 多晶硅薄膜晶体管 热载流子应力 热产生漏电 耗尽区调制效应 

分 类 号：TN325.2[电子电信—物理电子学]