固态源分子束外延法生长InGaP/GaAs异质结构的热力学分析(英文)  

Thermodynamic Analysis of InGaP/GaAs Heterostructures Grown by Solid-source Molecular Beam Epitaxy

作　　者：曹雪[1] 舒永春[1] 叶志成[1] 皮彪[1] 姚江宏[1] 邢晓东[1] 许京军[1] 

机构地区：[1]南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津300457

出　　处：《人工晶体学报》2010年第6期1406-1411,共6页Journal of Synthetic Crystals

基　　金：National High Technology Research and Development Program of China(2006AA 03Z413);Natural Science Foundation of Tianjin,China(08JCYBJC14800)

摘　　要：本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱附。所得到的模型与现有实验结果匹配较好。该模型的实验结果表明在InGaP的生长过程中,生长温度,In/Ga束流比及合金组分之间的相互关系,同时也与实验数据相吻合。该模型对于其他气相沉积生长方式也具有一定的适用性。A thermodynamic model for molecular beam epitaxy（MBE） growth of InGaP/GaAs heterostructures was established that considers two key factors,intrinsic strain due to the lattice mismatch and the desorption of InP.The derivation of the model is presented as well as comparisons with existing experimental data.The calculation results of this model indicated that the interactions among growth temperature,In/Ga flux ratio and alloy composition during the growth of InGaP,which accord with the experimental data.The model is also available for other vapor deposition methods.

关 键 词：热力学 固态源分子束外延 INGAP GAAS 异质结构 

分 类 号：O484[理学—固体物理]