靶与衬底之间的距离对ZnO∶Zr透明导电薄膜性能的影响  

Effect of Target-to-substrate Distance on the Properties of Zirconium-doped Zinc Oxide Transparent Conductive Films

作　　者：张化福[1] 陈钦生[1] 刘汉法[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《人工晶体学报》2010年第6期1412-1416,共5页Journal of Synthetic Crystals

基　　金：山东省自然科学基金(ZR2009GQ011)资助项目

摘　　要：利用直流磁控溅射法在室温玻璃衬底上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO∶Zr)透明导电薄膜。并系统地研究了靶与衬底之间的距离对ZnO∶Zr薄膜结构、形貌、光学及电学性能的影响。实验结果表明,靶与衬底之间的距离对ZnO∶Zr薄膜的生长速率、结晶质量及电学性能有很大影响,而对其光学性能影响不大。实验制备的ZnO∶Zr为六方纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向。当靶与衬底之间的距离从60 mm减小到50 mm时,薄膜的晶化程度提高、晶粒尺寸增大,薄膜的电阻率减小;然而,当距离继续减小时,薄膜的晶化程度降低、晶粒尺寸减小,薄膜的电阻率增大。当靶与衬底之间的距离为50 mm时,薄膜的电阻率达到最小值4.2×10-4Ω.cm,其可见光透过率超过95%。实验制备的ZnO∶Zr薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。Zirconium-doped zinc oxide（ZnO∶Zr） transparent conducting films with high transparency and low resistivity have been successfully prepared by direct current magnetron sputtering method at room temperature.The effect of target-to-substrate distance on structural,morphological,optical and electrical properties of ZnO∶Zr films were systematically investigated.Experimental results show that target-to-substrate distance plays an important role on the growth rate,crystalline quallity and electrical resistivity of ZnO∶Zr films but slightly influences the optical properties.The deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.When target-to-substrate distance decreases from 60 mm to 50 mm,the crystallinity improves and the crystallite size increases while the resistivity decreases.However,when the distance further decrease,the crystallinity as well as the crystallite size decreases while the resistivity increases.When target-to-substrate distance is 50 mm,it is obtained that the lowest resistivity is 4.2×10-4 Ω·cm with a very high transmittance of above 95% in the visible range.Highly transparent conducting ZnO∶Zr films deposited at low temperature will be used as transparent electrode in thin film solar cells and liquid crystal display.

关 键 词：靶与衬底之间的距离 ZnO∶Zr 透明导电薄膜 磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055