直流磁控溅射法制备铝铬共掺杂氧化锌薄膜及其结构和光电性能的研究  

Structure,Photoelectrical Properties of Al-Cr Co-doped ZnO Thin Films Prepared by DC Magnetron Sputtering

作　　者：周爱萍[1] 刘汉法[1] 张化福[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《人工晶体学报》2010年第6期1490-1493,1503,共5页Journal of Synthetic Crystals

基　　金：山东省自然科学基金(ZR2009GQ011)资助项目

摘　　要：利用直流磁控溅射法在玻璃衬底上制备了铝铬共掺杂氧化锌（ZACO）透明导电薄膜。通过X射线衍射（XRD）和扫描电镜（SEM）等表征方法对薄膜特性进行测试分析,研究了溅射压强和溅射功率对薄膜生长速率以及光电特性的影响。结果表明,随着溅射气压（1.5-4.5 Pa）的增大,薄膜沿c轴方向的结晶质量提高,薄膜表面更加致密,晶粒大小更加均匀。薄膜生长率随压强的增大而减小,但电阻率先减小后增大。当溅射功率由80 W增大到100 W时,薄膜的生长速率增大,电阻率减小。溅射压强为3.5 Pa,溅射功率为100 W时,薄膜的电阻率达到最小值2.574×10-3Ω.cm。紫外-可见透射光谱表明,所有薄膜在可见光区的透过率均超过89.9%。Transparent conductive Al-Cr codoped zinc oxide（ZACO） thin films were prepared by direct current magnetron sputtering on glass substrates.The properties of the films were characterized by XRD and SEM.The effects of sputtering pressure and sputtering power on the growth rate and the photoelectric properties of thin films were discussed in detail.The results show that the crystalline quality along the c-axis orientation is improved,the surface is more compact and the grain size is more uniform as the pressure（1.5-4.5 Pa） increasing.The growth rate decreases as the pressure increasing.The resistivity of ZnO∶Al,Cr films decreases as the sputtering pressure increased from 1.5 Pa to 3.5 Pa.However,as the pressure increases further,the electrical resistivity increases.The growth rate of the films increases and the resistivity decreases as the sputtering power increased from 80 W to 100 W.When the applied sputtering pressure is 3.5 Pa and sputtering power is 100 W,the resistivity of prepared films reaches the mininum value of 2.574×10-3 Ω·cm.The UV-vis transmittance spectrum shows that all the films present a transmittance of above 89.9% in the visible range.

关 键 词：ZACO薄膜 溅射压强 溅射功率 透明导电薄膜 

分 类 号：O484.4[理学—固体物理]