BiCMOS结构中阱特性的研究  

A Study on Behaviours of the p Well in BiCMOS Technology

作　　者：鲍荣生 

机构地区：[1]上海贝岭微电子制造公司,上海200233

出　　处：《微电子学》1999年第5期331-335,共5页Microelectronics

摘　　要：叙述了以双极型工艺为主体的BiCMOS结构中p阱电阻比值非线性的特性及其与芯片合格率的关系。在p阱下面采用埋层,抑制或消除了BiCMOS中p阱结构的寄生效应。The nonlinear behaviour of the resistor ratio of p well in BiCMOS structures based on bipolar process and its relationship with chip yield are described The parasitic effect of the p well in BiCMOS technology is suppressed or eliminated by using buried layers below p well, thus improving the yield of chips

关 键 词：半导体工艺 BICMOS 阱电阻 埋层 LSI/VLSI 

分 类 号：TN470.5[电子电信—微电子学与固体电子学] TN403