硅-硅直接键合的亲水处理及界面电特性  

A Three Step Method for Hydrophilicity Treatment in Silicon to Silicon Direct Bonding

作　　者：何进[1] 王新[1] 陈星弼[1] 

机构地区：[1]电子科技大学微电子学研究所,四川成都610054

出　　处：《微电子学》1999年第5期354-357,共4页Microelectronics

摘　　要：研究了基于亲水处理的微观机理分析和不同清洗剂亲水处理的过程及效果,提出了一种独特的三步亲水处理法。这一方法既能顺利完成室温预键合,又能减少界面上非定形大尺寸SiOx体的生成,避免了界面对电输运的势垒障碍。Based on the analysis of micromechanism of hydrophilicity treatment and effects of different cleaning solutions on silicon surface,a unique three step method for hydrophilicity treatment is presented in the paper,which can not only realize successful pre bonding at room temperature,but also avoid the grown up of large size amorphous SiO x that forms barriers to electric transportation in the bonding interface As a result,an ideal bonding interface can be obtained by using this method

关 键 词：半导体工艺 表面处理 硅片直接键合 亲水处理 

分 类 号：TN305.2[电子电信—物理电子学]