AlN薄膜的热应力模拟计算  

Simulation of Thermal Stress in AlN Thin Film

作　　者：邹微微[1] 王玉霞[1] 徐扬[1] 张秀[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《光机电信息》2011年第1期10-14,共5页OME Information

摘　　要：本文通过ANSYS有限元分析软件对薄膜的热应力进行了模拟计算,并通过理论计算验证了其合理性。模拟出了薄膜应力值及分布情况,分析了薄膜沉积温度与薄膜厚度对薄膜度应力的影响。从模拟的结果可以看出,薄膜上表面X方向应力主要集中在薄膜中心,边缘应力较小,但边缘的形变较大;薄膜的热应力随着薄膜沉积温度的升高而增大,随着膜厚的增加而减小。The thermal stress of the AIN film was simulated by using ANSYS software in this paper, and it＇s rationality was validated by theoretical calculation. The stress value and distribution of fihns was simulated. The influence of the film deposition temperature and film thickness on the stress of the film were analyzed. From the simulation resuits it could be seen that the X direction stress of film surface was concentred in the film center, the edge stress was smaller, but the edge of the deformation was relatively large. The film thermal stress intensified with the deposition temperature rising, but decreased with the film thickness increasing.

关 键 词：热应力 ALN薄膜 有限元 

分 类 号：O484.4[理学—固体物理]