硅单结晶体管γ射线辐照电阻变化规律研究  

Base resistance in Si unijunction transistor irradiated by ^(60)Co γ-radiation

作　　者：赵鸿飞[1] 杜磊[1] 何亮[1] 包军林[2] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071 [2]西安电子科技大学大学微电子学院,西安710071

出　　处：《物理学报》2011年第2期750-755,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60376023);西安应用材料创新基金(批准号:XA-AM-200603)资助的课题~~

摘　　要：针对硅材料和硅基器件辐照损伤机理之间存在的矛盾,采用对单结晶体管基区电阻实时监测的方法,得到单结晶体管基区阻值随γ射线辐照剂量的增加先减小后增大的规律.结合国内外硅材料和器件的辐照理论,从γ射线与物质的微观作用分析,提出单结晶体管基区主要的γ射线辐照机制位移效应较电离效应具有一定滞后性的观点,解决了原有矛盾,对器件加固的研究具有重要意义.The change of base resistance in Si-UJT under irradiation of ^（60）Co γ-ray is provided. Through multipoint measurement and real-time monitoring,it was shown that the base resistance decreased immediately and then increased slowly. Compared with domestic and foreign related research results,this proves that the displacement effect is the main effect of base resistance in Si-UJT irradiated by ^（60）Co γ-ray,but it lags behind the ionization effect from microanalysis of the interaction between γ-ray and Si material. This is very important for the radiation hardened research.

关 键 词：单结晶体管 Γ射线 实时监测 基区电阻 

分 类 号：O472.4[理学—半导体物理]