深阱RF功率双极晶体管雪崩击穿特性的模拟分析  

Simulation and Analysis of Avalanche Breakdown Characteristics of Deep\|well RF Power Bipolar Transistor

作　　者：张玉才[1] 胡思福[1] 

机构地区：[1]电子科技大学微电子科学与工程系,成都610054

出　　处：《Journal of Semiconductors》1999年第8期688-693,共6页半导体学报（英文版）

摘　　要：本文提出一种能有效提高 Ｒ Ｆ 功率晶体管雪崩击穿电压和频率特性的晶体管结构深阱 Ｒ Ｆ 功率双极晶体管，并且采用 Ｍ Ｅ Ｄ Ｉ Ｃ Ｉ分析软件研究了影响器件特性的一些因素：深阱阱壁的宽度与深度、阱壁填充介质、界面电荷以及场板．采用这种技术的功率晶体管（ Ｖ Ｈ Ｆ，线性输出功率 １５ Ｗ ）的结构参数为 Ｎ Ｃ＝ ７０×１０１５ ｃｍ － ３ Ｎ 型外延层，集电结结深 Ｘ Ｊ Ｃ＝ ０３μｍ ，未掺杂多晶硅填充深槽．典型的器件雪崩击穿电压为 Ｂ Ｖ Ｃ Ｂ Ｏ＝ ７２ Ｖ，截止频率 １６ Ｇ Ｈｚ；并且该晶体管具有较小的漏电流（～２０μ Ａ）．这初步显示了深阱结构在 Ｒ ＦDeep\|well transistor is proposed as a new structure to efficiently improve the avalanche breakdown voltage and the cut\|off frequency of RF power transistors. Some factors related to device characters are discussed through MEDICI simulation. They are the width and depth of well\|wall trench, the fill dielectric, the interface charge, and the field plate.A typical power transistor (VHF class\|A 15W) with this structure has sachieved high avalanche breakdown voltage of BV CBO =72V and high cut\|off frequency of 1.6GHz, with N\|type epitaxial layer of N C=7.0 ×10 15 cm -3 , the collector junction depth of X JC =0.3μm, and the trenches filled with undoped polysilicon. Also it has small leakage current (typical～20μA). These results demonstrate the application value of the “Deep\|Well\|Transistor” to make RF power transistor.

关 键 词：双极晶体管 雪崩击穿 深阱晶体管 

分 类 号：TN322.8[电子电信—物理电子学]