非均匀应变对量子阱结构的能带和增益的影响  

Effects of inhomogeneous strain of quantum well structures on the band structure and gain

作　　者：赵继民[1] 倪军[1] 胡辉 熊家炯[1] 朱嘉麟[1] 

机构地区：[1]清华大学现代应用物理系

出　　处：《清华大学学报（自然科学版）》1999年第6期11-14,共4页Journal of Tsinghua University(Science and Technology)

基　　金：国家"八六三"计划基金

摘　　要：研究了非均匀应变对低维量子结构的能带和ＴＥ模光增益所产生的影响。由变分法推导应变沿ｚ轴方向的解析分布。在有效质量理论框架下，采用传递矩阵方法计算应变沿ｚ轴方向非均匀分布时的量子阱结构的能带和ＴＥ模光增益。解析推导表明非均匀应变分布与ｘ－ｙ方向的尺度有密切关系。当ｘ－ｙ方向的尺度较小时，阱区内的应变表现为明显的非均匀分布。计算结果表明，非均匀应变对量子线和量子点结构的能带和增益有着极为重要的影响。The effects of inhomogeneous strain on the band structure and TE mode gain were studied for low dimensional quantum systems. The analytical form of strain distribution was obtained by a variational method minimizing the elastic energy due to the intrinsic strain. Based on the effective mass theory with the use of propagation matrix method, the band structure and TE mode gain were computed. The inhomogeneous strain has direct relation with the x y dimension of the quantum well. When the x y dimension is small, the strain can be seen clearly as inhomogeneous. The results show that for the band structure and gain of quantum wires and dots, the inhomogeneous strain effects are important.

关 键 词：量子阱结构 能带 增益 非均匀应变 半导体 

分 类 号：O471.5[理学—半导体物理]