非晶硅薄膜晶体管的热阻模型  

Thermal Impedance Model for Amorphous Silicon Thin Film Transistors

作　　者：刘远[1,2] 姚若河[2] 李斌[2] 

机构地区：[1]广东工业大学材料与能源学院,广东广州510006 [2]华南理工大学电子与信息学院,广东广州510640

出　　处：《液晶与显示》2011年第1期28-33,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.60776020);广东工业大学博士启动项目(No.405105006)

摘　　要：基于能量方程、热流方程和边界条件,推导出了非晶硅薄膜晶体管的沟道热阻模型。采用该模型可准确预估器件有源层内的平均温度。在沟道热阻模型的基础上,考虑器件间场氧化层和金属互联线的影响,建立了非晶硅薄膜晶体管的二维热阻模型。采用该模型可描述器件有源层内温度的横向分布,并快速预估沟道内的最高结温。最后,将模型预测结果与器件模拟仿真结果进行了对比,两者拟合良好。A channel thermal impedance model for amorphous silicon thin film transistor is derived from a system of coupled energy equation,heat flowing equation and boundary conditions.By the use of this model,the average temperature in the active region can be calculated.Then,by considering of the effects of field oxide and interconnects between devices,a two dimensional thermal model is developed.By the use of this model,the temperature distribution in the channel can be described and the maximum junction temperature can be calculated.The accuracy of the proposed model has been verified with the device simulation data.

关 键 词：非晶硅薄膜晶体管 热阻 自热效应 温度分布 

分 类 号：TN321.5[电子电信—物理电子学]