溅射压强对钛镓共掺杂氧化锌透明导电薄膜性能的影响  

Influence of Sputtering Pressure on Properties of Ti,Ga Co-Doped Zinc Oxide Thin Films

作　　者：史晓菲[1] 郭美霞[1] 刘汉法[1] 高金霞[1] 

机构地区：[1]山东理工大学理学院,山东淄博255049

出　　处：《液晶与显示》2011年第1期54-58,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：山东省自然科学基金(No.ZR2009GL015)

摘　　要：利用直流磁控溅射工艺在玻璃衬底上制备出了透过率高、电阻率较低的钛镓共掺杂氧化锌透明导电薄膜(TGZO)。研究了溅射压强对TGZO薄膜结构、形貌和光电性能的影响。研究结果表明,溅射压强对TGZO薄膜的结构和电阻率有重要影响。X射线衍射(XRD)表明,TGZO薄膜为具有c轴择优取向的六角纤锌矿结构多晶薄膜。薄膜的电阻率具有随着溅射压强的增大先减小,后增大的规律,在溅射压强为11Pa时,实验获得的TGZO薄膜晶格畸变最小,电阻率具有最小值1.48×10-4Ω.cm,透过率具有最大值94.3%。实验制备的TGZO薄膜附着性能良好,在400～760nm波长范围内的平均透过率都高于90%。Transparent conducting Ti,Ga co-doped zinc oxide films（TGZO） with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature.Micro-structural,optical and electrical properties of TGZO films were investigated.XRD photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of TGZO films.The electrical resistivity decreases when the sputtering pressure increases from 1.0 Pa to 11 Pa.When the sputtering pressure is 11 Pa,it is obtained that the lowest resistivity is 1.48×10-4 Ω·cm.The electrical resistivity increases when the sputtering pressure increases from 11 Pa to 16 Pa.All the films present a high transmittance of above 90% in the visible range.

关 键 词：TGZO薄膜 透明导电薄膜 溅射压强 磁控溅射 

分 类 号：O484[理学—固体物理]