两层金属场极板高压LDMOS的优化设计  

Optimization Design of Double Metal Field Plates for High Voltage LDMOS

作　　者：张永红[1] 黄瑞[1] 

机构地区：[1]上海第二工业大学实验与实训中心,上海201209

出　　处：《微纳电子技术》2011年第2期87-91,共5页Micronanoelectronic Technology

基　　金：上海第二工业大学校基金项目(QD209012)

摘　　要：采用场极板结终端技术提高LDMOS击穿电压,借助二维器件仿真器MEDICI软件对基于体硅CMOS工艺500V高压的n-LDMOS器件结构和主要掺杂参数进行优化,确定漂移区的掺杂浓度(ND)、结深(Xj)和长度(LD)。对多晶硅场极板和两层金属场极板的结构参数进行模拟和分析,在不增加工艺复杂度的情况下,设计一种新型的具有两层金属场极板结构的500Vn-LDMOS。模拟结果表明,双层金属场极板结构比无金属场极板结构LDMOS的击穿电压提高了12%,而这两种结构LDMOS的比导通电阻(RS)基本一致。The breakdown voltage of the LDMOS was improved by the junction terminal techno-logy of the field plate,the structure and the main doping parameters of the 500 V n-LDMOS based on the bulk silicon CMOS technology were optimized with the simulation tool MEDICI,and the doping density ND,the junction depth Xj and the length LD of the shifting region were determined.The structure parameters of the polysilicon field plate and the double metal field plates were simulated and analyzed.A novel 500 V n-LDMOS with double metal field plates was presented without any extra process steps.The simulation results show that the breakdown voltage of the double metal field plates structure is improved by 12% compared to that of the LDMOS without any metal field plates.Besides that,the specific on-resistance almost does not change.

关 键 词：LDMOSFET 金属场极板 多晶硅场极板 击穿电压 比导通电阻 

分 类 号：TN386.1[电子电信—物理电子学]