SiC材料及器件的应用发展前景  

Application and Development of SiC Materials and Devices

作　　者：王守国[1,2] 张岩[1] 

机构地区：[1]哈尔滨工业大学深圳研究生院电子与信息工程学科部 [2]西北大学信息与技术学院,西安710127

出　　处：《自然杂志》2011年第1期42-45,53,共5页Chinese Journal of Nature

摘　　要：SiC材料是第三代半导体材料,由于可用于军事领域,国外限制该产品的出口。作者首先阐述了SiC材料的基本特性,介绍了SiC晶体的生长技术及晶体供应商,尤其是国内SiC晶体材料的研制现状,最后评述SiC器件的应用领域和市场前景,并指出中国应建立SiC材料及器件研制和应用的产业链。SiC material is the third generation semiconductor material, which is limited for export by other country for its being used in military field. In this paper, the basic characteristics of SiC materials are introduced firstly. The grow methods of SiC chips and the manufacture corporations are summarized. The emphasis is on the development of SiC chips in China. The application areas of SiC devices and the prospect of the market are given lastly. The industrial chain of the fabrication, application of the SiC material and devices should be constructed in China.

关 键 词：SIC 半导体器件 材料 晶片 工艺 

分 类 号：TN304.24[电子电信—物理电子学]