关于半导体器件热特性表征和控制技术的研究  

Study on Characterization and Control of the Thermal Performance of Semiconductor Devices

作　　者：金毓铨[1] 陶有迁[1] 王因生[1] 韩钧[1] 施传贵[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2011年第1期53-55,共3页Research & Progress of SSE

摘　　要：根据对器件散热特性的分析,提出用特定脉宽的瞬态热阻抗表征器件的稳态散热特性。测量了特定器件热阻与温度的依赖关系,建议在实际工作中注意器件热阻并不为常数的客观事实。提出应力试验前后测量器件热阻可有效控制器件的某些制造缺陷。Based on analyzing the heat conduction characteristic of the devices,this paper suggests that the steady-state thermal performance of the semiconductor devices can be characterized by using transient thermal impedance under a specific pulse width.The temperature dependent performance of the thermal resistance of some microwave devices is measured.It is noted that the thermal resistance is not a constant when evaluating a device.The test results show that some manufactured defect of devices can be discoverd and controlled by measure the thermal resistance of devices before and after the stress tests.

关 键 词：半导体器件 热特性 稳态热阻 瞬态热阻抗 

分 类 号：TN37[电子电信—物理电子学]