GaN基HEMT微加速度计的压阻系数测试  

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

作　　者：张倩倩[1] 唐建军[1] 王勇[2] 梁庭[1] 熊继军[1,3] 

机构地区：[1]中北大学电子测试技术国家重点实验室 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《微纳电子技术》2011年第3期172-176,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60806022;50730009);国家重点实验室基金资助项目(9140C1204030907)

摘　　要：介绍了GaN基HEMT微加速度计结构的设计、加工及测试过程,并对结果做出了分析。通过喇曼测试与ANSYS仿真软件相结合的方式进行应力测试分析,利用安捷伦4156C测试仪对GaN基HEMT进行不同应力状态及不同温度下IDS-VDS特性测试,并通过相关测试数据计算分析GaN基HEMT的压阻系数及其变化规律。结果表明：常温下GaN基HEMT的等效压阻系数为（2.47±0.04）×10^-9Pa^-1,高于Si的压阻系数（7.23±3.62）×10^-10Pa^-1。同时测试了HEMT在-40-50℃的输出特性,实验结果表明,HEMT饱和源漏电流随着温度的升高而下降。压阻系数具有负温度系数,且压阻系数随着温度的升高以226TPa^-1/℃的速率减小。The designing,processing and testing of the GaN-based HEMT micro-accelerometer structure were introduced,and the results were analyzed.The stress testing was carried out by Raman spectrum test and ANSYS simulation software.The IDS-VDS characteristics of the GaN-based HEMT at different stress states and different temperatures were tested by Agilent 4156C.The piezoresistance coefficient and its variation of the GaN-based HEMT were calculated and analyzed with the relevant test data.The results show that the equivalent piezoresistance coefficient of the GaN-based HEMT at room temperature is（2.47±0.04）×10^-9· Pa^-1,which is higher than that of the silicon,i.e.（7.23±3.62）×10^-10· Pa^-1.At the same time,the output characteristic of the HEMT from-40 ℃ to 50 ℃ was tested.The result shows that the saturation source-drain current of the HEMT decreases with the increase of the temperature.The piezoresistance coefficient has a negative temperature coefficient,and the piezoresistance coefficient decreases at the rate of 226 TPa^-1/℃ with the increase of the temperature.

关 键 词：加速度计 GaN ALGAN 高电子迁移率晶体管(HEMT) 力电耦合 压阻系数 温度 

分 类 号：TH703[机械工程—仪器科学与技术] TN386[机械工程—精密仪器及机械]