磁控溅射气体参数对氧化铟薄膜特性的影响  

Effects of Gas Parameters on Properties of In_2O_3 Thin Films Deposited by Magnetron Sputtering

作　　者：才玺坤[1] 原子健[1] 朱夏明[1] 张兵坡[1] 邱东江[1] 吴惠桢[1] 

机构地区：[1]浙江大学物理系,杭州310027

出　　处：《人工晶体学报》2011年第1期17-21,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(10974174)资助项目;浙江省自然科学基金(Z6100117)资助项目

摘　　要：采用射频磁控溅射法生长氧化铟薄膜,研究了溅射气压和溅射气体对氧化铟薄膜结构及光电特性的影响。X射线衍射结果表明制得的薄膜为立方结构的多晶体,随着溅射气压的升高,薄膜晶粒尺寸变大。1 Pa下沉积的氧化铟薄膜具有最大的迁移率和最小的载流子浓度,分别为15.2 cm^2/V.s和1.19×10^19cm^-3。用O2溅射的氧化铟薄膜载流子浓度降至4.39×1013cm^-3,在红外区（1.5-5.5μm）的平均透射率为85%,高于Ar溅射的薄膜,这可能是由于O2的加入减少了氧空位,降低了载流子浓度,使得自由载流子对红外光的吸收减弱。In2O3 thin films were prepared by R.F.magnetron sputtering.The effect of sputtering pressure and sputtering gas on the structure,photoelectric properties of In2O3 thin films were investigated.The X-ray diffraction（XRD） analysis shows that the films are polycrystalline and retain a cubic structure.As the sputtering pressure increasing,the grain size of In2O3 thin film increases.The film deposited at the pressure of 1 Pa has the highest mobility of 15.2 cm^2/V·s and the lowest carrier concentration of 1.19×10^19 cm^-3.The carrier concentration of the film grown in O2 atmosphere decreases to 4.39×1013 cm^-3 and the average optical transmittance in the infrared region（1.5-5.5 μm） reaches 85%,which is higher than that of the films grown in Ar atmosphere.It can be explained that the addition of O2 in sputtering resulted in oxygen vacancies decrease which leads to the reduction of the carrier concentration and the decrease of absorption of free carrier in the infrared region.

关 键 词：IN2O3 磁控溅射 溅射气压 电学特性 氧空位 

分 类 号：O484[理学—固体物理]