退火过程对c轴择优取向的ZnO薄膜光学性质的影响  

Effect of annealing processes on optical properties of c-axis oriented ZnO films

作　　者：谢学武[1] 廖源[1] 张五堂[1] 余庆选[1] 傅竹西[1] 

机构地区：[1]中国科学技术大学物理系,安徽合肥230026

出　　处：《量子电子学报》2010年第2期221-226,共6页Chinese Journal of Quantum Electronics

基　　金：安徽省自然科学基金(070412034;070414184)资助项目

摘　　要：利用溶胶凝胶法在石英衬底上采用旋涂法制备出ZnO薄膜,通过X射线衍射仪发现不同的退火温度对ZnO薄膜的择优取向有很大影响;通过紫外可见分光光度计和室温发光谱可以看出,制备的薄膜有很好的光学透过性和很强的紫外发光特性,而不同的退火温度对其光学性质有很大的影响。实验发现采用此种方法在650℃左右退火是一个合适的退火温度,结构特性和光学性质都相对较好;采用热分析方法可知ZnO将在375℃左右从非晶转向结晶状态,因而在常规ZnO薄膜制备方法中增加一步500℃的热处理将有助于提高ZnO薄膜的结晶质量。Zinc oxide films were deposited on fused quartz wafers using sol-gel technique and by adopting the spin-coating method. The structure of c-axis oriented ZnO films measured by X-ray diffraction is mainly decided by the post-annealing temperature. ZnO films annealed at different temperatures have a high trans- mittance and strong UV emission peaks which were measured by UV-VIS double-beam spectrophotometer and PL spectra. It is obvious that the annealing temperature at 650 ℃ is the best condition for high-quality ZnO film. The thermogravimetric analysis（TGA） of the sol was carried out, and it is found that the temperature from amorphous to more ordered state is 375 ℃, and crystal ZnO film is helpful to the deposition of ZnO film with high quality via the sol-gel method.

关 键 词：材料 溶胶凝胶法 ZNO薄膜 c轴择优取向 退火 

分 类 号：O484.41[理学—固体物理]