不同沟道宽长比有机薄膜晶体管性能的研究  

Study on the Performance of Organic Thin Film Transistors with Different Ratio of Channel Width to Length

作　　者：严剑飞[1] 吴志明[1] 太惠玲[1] 李娴[1] 付嵩琦[1] 

机构地区：[1]电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体光电》2011年第1期52-55,108,共5页Semiconductor Optoelectronics

基　　金：总装预研基金项目

摘　　要：以酞菁铜为有源层,二氧化硅为绝缘层,钛/金作为电极,制作了三种不同沟道宽长比的有机薄膜晶体管器件。通过对这三种器件的电学特性进行对比,分析了不同沟道宽长比对器件电学性能的影响。结果表明,沟道宽长比对器件的迁移率影响很小,阈值电压随着宽长比的增大而减小,漏电流随沟道宽长比的增大而增大;当源漏极间电压在一定范围内时,开态电流也随沟道宽长比的增大而增大。Three kinds of organic thin films transistors （OTFT） with different ratio of channel width to length were fabricated by using copper phthalocyanine and silicon dioxide as the active layer and the insulating layer, respectively, and titanium/aurum as the electrode. The electrical properties of the three devices were compared and the effects of the ratio of channel Width tc^length on the electrical performance were analyzed. The results show that the ratio of channel width to length has little effect on mobility, and the threshold voltage decreases whereas the leakage current increases as the ratio increases. The open state current increases with the increasing ratio of channel width to length when the source drain voltage is within a certain range.

关 键 词：沟道宽长比 有机薄膜晶体管 迁移率 阈值电压 

分 类 号：TN321.5[电子电信—物理电子学]