Zr/Nb薄膜材料的制备及界面结构研究  

Growth and Interface Structures of Zr/Nb Films and Si(110) Substrate

作　　者：姚文清[1] 张立武[1] 牟豪杰[1] 张川[1] 严谨[1] 朱永法[1] 杨江荣[2] 刘柯钊[2] 鲜晓斌[2] 

机构地区：[1]清华大学化学系,北京100084 [2]表面物理与化学国家重点实验室,绵阳621907

出　　处：《真空科学与技术学报》2011年第2期134-137,共4页Chinese Journal of Vacuum Science and Technology

基　　金：表面物理与化学国家重点实验室基金项目(90000460200503)

摘　　要：通过直流磁控溅射法在单晶Si(100)基底上制备了Zr/Nb/Si薄膜材料。X射线衍射(XRD)研究表明Zr薄膜以多晶形式存在,而Nb薄膜则形成了(110)晶面择优生长。薄膜中Zr和Nb晶粒大小分别为14,6 nm。扫描电镜研究表明形成的薄膜表面平整光滑,没有微裂纹存在。扫描俄歇电子能谱及X射线光电子能谱的研究表明,Zr/Nb/Si薄膜样品具有清晰的界面结构。在薄膜表面形成了致密的氧化层物种,而在膜层内部少量氧则以吸附态形式存在。The Zr/Nb films were deposited by DC magnetron sputtering on Si（110） substrates.The impacts of the film growth conditions,including the sputtering power,substrate temperature and pressure,etc.,on properties of the Zr/Nb films were studied.Its microstructures and stoichiometries were characterized with X-ray diffraction（XRD）,scanning electron microscopy（SEM）,and scanning Auger spectroscopy（AES）.The results show that the polycrystalline Zr layer grew with（100）,（101） and （102） as the preferential orientations,and that the Nb layer has a crystalline structure with preferential growth orientation in（110）.The average grain sizes of Zr and Nb were found to be 14 nm and 6 nm,respectively.The fairly flat,smooth,compact,fracture-free Zr/Nb films have well-defined sharp interface.A compact oxides layer was found to cover the surfaces with a small amount of oxygen existing inside the films in the chemical adsorption mode.

关 键 词：Zr/Nb/Si薄膜 磁控溅射法 界面 扫描电镜 X射线衍射 俄歇电子能谱 X射线光电子能谱 

分 类 号：O64[理学—物理化学]