金属/半导体肖特基接触模型研究进展  

Latest Progress of Schottky Contact Modeling at Interface of Metal and Semiconductor

作　　者：王光伟[1] 郑宏兴[1] 徐文慧[1] 杨旭[1] 

机构地区：[1]天津工程师范大学电子工程学院,天津300222

出　　处：《真空科学与技术学报》2011年第2期149-153,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(No.60871026)

摘　　要：在分析理想金属/半导体肖特基接触的基础上,概述了一般情形下肖特基接触的形成机理和影响因素。金属/半导体间的界面层使得肖特基势垒高度(SBH)对功函数的依赖减弱,也导致SBH与外加偏压有关。研究证实,多种因素,如界面晶向、原子结构、化学键和结构不完整性等,都会造成SBH的空间不均匀分布。该特性在肖特基接触中普遍存在,并对基于肖特基结的器件工作有显著影响。The latest progress of the theoretical study on Schottky contact at the interface of metal and semiconductor was tentatively reviewed in a thought provoking way.The discussions centered on mechanisms of Schottky barrier formation under a general condition.The interface of metal and semiconductor results in a weak dependence of Schottky barrier height（SBH）on the work function difference between the metal and the semiconductor,and a correlation between the SBH and the bias voltage.Extensive studies show that the inhomogeneous spatial distribution of the SBH originates from a variety of factors,such as the crystal orientation of the semiconductor,chemical bonds,and microstructures at the metal/semiconductor interface,etc.And such inhomogeneity of the SBH strongly affects the characteristics of quite a few electronics devices fabricated with Schottkey junctions.

关 键 词：肖特基接触 肖特基势垒高度 理想因子 非单晶界面 势垒高度不均匀性 

分 类 号：O472.1[理学—半导体物理]