磁控溅射硅基AlN薄膜的氮-氩气体流量比研究  

The Study N_2-Ar Flow Ratio of Magnetron Sputtering AlN Thin Films on Silicon

作　　者：王代强[1,2,3] 杨发顺[2,3] 徐希嫔[2] 陈雨青[4] 刘桥[2,3] 

机构地区：[1]贵州大学人民武装学院,贵州贵阳550025 [2]贵州大学理学院,贵州贵阳550025 [3]贵州省微纳电子及软件技术重点实验室,贵州贵阳550025 [4]贵阳学院物理与电子信息科学系,贵州贵阳550009

出　　处：《压电与声光》2011年第2期248-250,共3页Piezoelectrics & Acoustooptics

基　　金：科技部科技人员服务企业项目基金资助项目(2009GJF20021)

摘　　要：反应磁控溅射制备AlN薄膜时,薄膜的质量与众多实验参数有关。靶基距、溅射功率、工作气体总压及N2气分压等实验参数影响薄膜质量的报道很多,因此,研究N2/Ar流量比对磁控溅射硅基AlN薄膜元素种类与含量的影响很有实用意义。实验表明,在其他参数一定的情况下,N2/Ar流量比对AlN薄膜元素种类与含量有很大影响。通过实验验证,选择N2/Ar流量比约为1.525可获得高质量的AlN薄膜(100取向)。The film quality is related to many experimental parameters when using the reactive magnetron sputtering method for praparing the AlN film.And the current reported studies only involved in the effects of the target-substrate distance,sputtering power,working gas pressure and the partial pressure of N2 gas on the quality of the thin film.Thus studying on the effect of the N2/Ar flow ratio on the element types and contents of the silicon-based AlN thin film by magnetron sputtering has very practical significance.The experimental results showed that the high quality AlN film（100 orientation） could be obtained by the choice of the N2/Ar flow ration of about 1.525.

关 键 词：流量比 ALN薄膜 直流磁控反应溅射 元素种类与含量 

分 类 号：TN384[电子电信—物理电子学]