Si-栅MOSFET抗总剂量加固技术  

Total Dose Radiation Hardening of Si Gate MOSFETs

作　　者：胡永贵[1] 谭开州[1] 张家斌[1] 张正璠[1] 肖鹏[2] 夏培邦 

机构地区：[1]信息产业部电子第二十四研究所,重庆400060 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《微电子学》1999年第6期441-444,共4页Microelectronics

摘　　要：MOSFET总剂量加固强烈依赖于工艺技术,对干氧方式下不同条件制备的NMOS、PMOS管,分析其辐照响应,并借用亚阈值I—V技术分离氧化物陷阱电荷和界面陷阱对阈值电压漂移的贡献。Total dose radiation hardness of MOSFETs is strongly dependent on the processing technology.NMOS and PMOS transistors fabricated with dry oxides under different conditions are analyzed for their radiation responses The contribution of oxide trap charge and interface trap to threshold voltage shift is separated by means of subthreshold I V technique Finally,optimal process conditions for dry oxide total dose radiation hardening are obtained

关 键 词：MOSFET 总剂量辐照 Si-栅 加固 

分 类 号：TN386.1[电子电信—物理电子学]