热载流子应力感应n-MOSFETsGIDL特性退化的机理  

Mechanisms of GIDL Degradation Induced by Hot\|Carrier Stresses in n\|MOSFETs

作　　者：徐静平[1] 黎沛涛[2] 

机构地区：[1]华中理工大学电子科学与技术系,武汉430074 [2]香港大学电机电子工程系香港薄扶林道

出　　处：《Journal of Semiconductors》1999年第12期1087-1092,共6页半导体学报（英文版）

基　　金：香港大学RGC和CRCG基金

摘　　要：对不同栅氧化物ｎ－ＭＯＳＦＥＴｓ 的ＧＩＤＬ（Ｇａｔｅ－Ｉｎｄｕｃｅｄ Ｄｒａｉｎ Ｌｅａｋａｇｅ）特性在不同热载流子应力下的退化行为进行了研究．发现ＧＩＤＬ的漂移对栅电压十分敏感，在ＶＧ＝ ０．５ＶＤ 的应力条件下呈现最大．通过对漏极附近二维电场及载流子分布的模拟，引入“亚界面陷阱”概念，对所涉及的机理提出了新见解，认为：在应力期间，亚界面和体氧化物空穴陷阱的解陷分别相应于ＶＧ＝ ０．５ＶＤ 和ＶＧ＝ ＶＤ 两种典型应力下ＧＩＤＬ的漂移．实验还观察到Ｎ２Ｏ氮化，特别是Ｎ２Ｏ 退火ＮＨ３ 氮化的ｎ－ＭＯＳＦＥＴｓ比常规热氧化ｎ－ＭＯＳＦＥＴｓ 有小得多的ＧＩＤＬ漂移，表明这种氮化氧化物能大大抑制亚界面和体空穴陷阱．Degradation in Gate\|Induced Drain Leakage(GIDL) of n\|MOSFETs with different gate oxides under different hot\|carrier stresses is investigated.It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a stress with V \-G=0\^5 V \-D.Through 2\|D simulation of electrical field and carrier distribution near the drain,and the introduction of “sub\|interface traps”concept,a new insight on the mechanisms involved in GIDL shift is proposed,i.e.sub\|interface and bulk\|oxide hole detrappings during stressing are responsible for the respective GIDL shifts under two typical stresses of V \-G=0\^5 V \-D and V \-G= V \-D.Furthermore,it is observed that N\-2O\|nitrided and especially N\-2O\|annealed NH\-3\|nitrided n\|MOSFETs have much smaller GIDL shift as compared to conventional thermally\|oxidized n\|MOSFETs,indicating considerably suppressed sub\|interface and bulk\|oxide hole traps in these oxynitrides. EEACC:2560R, 0170N

关 键 词：N-MOSFETS GIDL 热载流子应力 退化 

分 类 号：TN386.1[电子电信—物理电子学]