云南高校图书馆联盟文献共享服务平台- N-MOSFETS

N-MOSFETS: 作品数：10被引量：8H指数：1; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：谭长华穆甫臣许铭真段小蓉章晓文更多>>; 相关机构：北京大学中华人民共和国工业和信息化部华南理工大学香港大学更多>>; 相关期刊：《Chinese Physics B》《华南理工大学学报（自然科学版）》《Journal of Semiconductors》《Science China(Information Sciences)》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划更多>>

Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs: 《Science China(Information Sciences)》2019年第6期186-188,共3页Qin HUANG Renhua LIU Yabin SUN Xiaojin LI Yanling SHI Changfeng WANG DuANDuan LIAO Ming TIAN; supported by National Science and Technology Major Project (Grant No. 2016ZX02301003);National Natural Science Foundation of China (Grant Nos. 61574056, 61704056);Shanghai Sailing Program (Grant No. YF1404700);Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800); Dear editor,FDSOI MOSFETs do not rely on channel doping to control short channel effects;they overcome the barriers of conventional bulk MOSFETs by means of scaling. Owing to the presence of the buried oxide insulator...; 关键词：MOS SOI Physical mechanism of PERFORMANCE adjustment in SELECTIVE BURIED OXIDE N-MOSFETS

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs被引量：1: 《Chinese Physics B》2014年第9期154-160,共7页彭超胡志远宁冰旭黄辉祥樊双张正选毕大炜恩云飞; supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201205);the National Natural Science Foundation of China(Grant No.61106103); we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsi...; 关键词：partially depleted silicon-on-isolator n-MOSFET sidewall implant shallow trench isolation totalionizing dose

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs: 《Chinese Physics B》2012年第2期490-497,共8页Jiang Xiang-Wei Li Shu-Shen; supported by the National Basic Research Program of China (Grant No.G2009CB929300);the National Natural Science Foundation of China (Grant Nos.60821061 and 60776061); By using the linear combination of bulk band （LCBB） method incorporated with the top of the barrier splitting （TBS） model, we present a comprehensive study on the quantum confinement effects and the source-to-drai...; 关键词：quantum confinement TUNNELING metal-oxide-semiconductor field-effect transistors linear combination of bulk band

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs被引量：1: 《Science China(Information Sciences)》2011年第8期1756-1761,共6页DU Gang LIU XiaoYan HAN RuQi; supported Supported by the National Natural Science Foundation of China(Grant No.60606013);NKBRP 2006CB302705; The high frequency performances of nano-scale ultra-thin-body （UTB） Schottky-barrier n-MOSFETs （SB-nMOSFETs） are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devi...; 关键词：Monte Carlo ultra thin body （UTB） Schottky-barrier MOSFETs （SB-MOSFETs） high frequency

Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests: 《Journal of Semiconductors》2009年第12期30-32,共3页何进马晨月王昊陈旭张晨飞林信南张兴; supported by the Special Funds for the State Key Development Program for Basic Research of China(973);the State Key Development Program for Basic Research of China;the National Natural Science Foundation of China (Nos.60976066,60936005); A clear correspondence between the gated-diode generation-recombination （R-G） current and the performance degradation of an SOI n-channel MOS transistor after F-N stress tests has been demonstrated. Due to the incre...; 关键词：MOSFET degradation F-N stress interface traps gated-diode method SOI technology

Low voltage substrate current： a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses: 《Chinese Physics B》2007年第11期3502-3506,共5页王彦刚许铭真谭长华; The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is f...; 关键词：interface states substrate current ultra-thin oxide constant voltage stress

热载流子效应对n-MOSFETs可靠性的影响被引量：6: 《华南理工大学学报（自然科学版）》2003年第7期33-36,共4页朱炜玲黄美浅章晓文陈平李观启; 研究热载流子效应对不同的沟道长度n-MOSFETs退化特性的影响。结果表明,随着器件沟道长度的减小,其跨导退化明显加快,当沟道长度小于1μm时退化加快更显著。这些结果可以用热载流子注入后界面态密度增加来解释。; 关键词：热载流子效应 MOSFET 跨导阈值电压可靠性

Oxide Thickness Effects on n-MOSFETs Under On-State Hot-Carrier Stress: 《Journal of Semiconductors》2002年第3期290-295,共6页胡靖穆甫臣许铭真谭长华; 摩托罗拉先进产品研究与发展实验室资助项目; Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of H...; 关键词：HCI hot carrier effect oxide thickness effect lifetime prediction model device reliability

超薄栅n-MOSFETs热载流子寿命预测模型: 《Journal of Semiconductors》2001年第10期1306-1309,共4页穆甫臣许铭真谭长华段小蓉; 对氧化层厚度为 4和 5 nm的 n- MOSFETs进行了沟道热载流子应力加速寿命实验 ,研究了饱和漏电流在热载流子应力下的退化 .在饱和漏电流退化特性的基础上提出了电子流量模型 ,此模型适用于氧化层厚度为 4— 5; 关键词：热载流子效应 N-MOSFET 寿命预测场效应晶体管

热载流子应力感应n-MOSFETsGIDL特性退化的机理: 《Journal of Semiconductors》1999年第12期1087-1092,共6页徐静平黎沛涛; 香港大学RGC和CRCG基金; 对不同栅氧化物ｎ－ＭＯＳＦＥＴｓ的ＧＩＤＬ（Ｇａｔｅ－ＩｎｄｕｃｅｄＤｒａｉｎＬｅａｋａｇｅ）特性在不同热载流子应力下的退化行为进行了研究．发现ＧＩＤＬ的漂移对栅电压十分敏感，在ＶＧ＝０．５ＶＤ的应力条件下呈现...; 关键词：N-MOSFETS GIDL 热载流子应力退化

N-MOSFETS