热载流子效应对n-MOSFETs可靠性的影响  

Influence of Hot-Carrier-Effect on Reliability of n-MOSFETs

作　　者：朱炜玲[1] 黄美浅[1] 章晓文[2] 陈平[1] 李观启[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640 [2]信息产业部电子5所,广东广州510610

出　　处：《华南理工大学学报（自然科学版）》2003年第7期33-36,共4页Journal of South China University of Technology(Natural Science Edition)

摘　　要：研究热载流子效应对不同的沟道长度n-MOSFETs退化特性的影响。结果表明,随着器件沟道长度的减小,其跨导退化明显加快,当沟道长度小于1μm时退化加快更显著。这些结果可以用热载流子注入后界面态密度增加来解释。Influence of hot-carrier-effect on degradation characteristics of different channel length n-MOSFETs have been investigated. As the channel length of device decreases, the rate of transconductance degradation is fast, especially when its channel length is less than 1 um, the rate of transconductance degradation is faster. These results can be explained by interface state density increased after hot carrier injection.

关 键 词：热载流子效应 MOSFET 跨导 阈值电压 可靠性 

分 类 号：TN304[电子电信—物理电子学] TN386