超薄栅n-MOSFETs热载流子寿命预测模型  

A New Lifetime Prediction Model for n-MOSFETs with Ultrathin Gate Oxides Under Hot-Carrier Stress

作　　者：穆甫臣[1] 许铭真[1] 谭长华[1] 段小蓉[1] 

机构地区：[1]北京大学微电子所,北京100871

出　　处：《Journal of Semiconductors》2001年第10期1306-1309,共4页半导体学报（英文版）

摘　　要：对氧化层厚度为 4和 5 nm的 n- MOSFETs进行了沟道热载流子应力加速寿命实验 ,研究了饱和漏电流在热载流子应力下的退化 .在饱和漏电流退化特性的基础上提出了电子流量模型 ,此模型适用于氧化层厚度为 4— 5Hot carrier degradation of n MOSFETs under V g=V d stress mode is examined.A new lifetime prediction model electron fluence model is developed based on the universal power law between the degradation of saturated drain current (dI dsat ) and the product of the injected charge fluence times the gate current,which is independent of gate or drain voltages.This model applies to n MOSFETs with ultrathin gate oxides.The lifetime can be estimated under the operation conditions.

关 键 词：热载流子效应 N-MOSFET 寿命预测 场效应晶体管 

分 类 号：TN386.5[电子电信—物理电子学]