研究In_(0.82)Ga_(0.18)As/InP的临界厚度  

Study of the Critical Thicknees of In_(0.82)Ga_(0.18)As/InP

作　　者：张铁民[1] 缪国庆[2] 孙秋[3] 孙书娟[1] 傅军[1] 符运良[1] 

机构地区：[1]海南师范大学物理与电子工程学院,海南海口571158 [2]中国科学院激发态物理重点实验室,吉林长春130021 [3]海南师范大学图书馆,海南海口571158

出　　处：《海南师范大学学报（自然科学版）》2011年第1期44-46,55,共4页Journal of Hainan Normal University（Natural Science）

基　　金：海南省教育厅高等学校科研基金项目(Hjkj2010-21);国家自然科学基金重点项目(50132020);海南省自然科学基金项目(609002);海南师范大学学科建设基金项目(0020303020317)

摘　　要：根据Matthew-Blakeslee和People-Bean的临界厚度理论,利用牛顿迭代公式,使用计算机模拟出高In组分InxGa1-xAs临界厚度的数值解,得出理论上的In0.82Ga0.18As临界厚度.使用低压金属有机化学气相淀积(LP-MOCVD)技术,在InP(100)衬底上分别生长低于临界厚度、等于临界厚度和高于临界厚度的In0.82Ga0.18As低温层,然后在生长条件一致情况下生长In0.82Ga0.18As高温层,分析临界厚度对In0.82Ga0.18As高温层的影响.According to the theory on critical thickness of Matthew-Blakeslee and People–Bean, using Newton iterative formula, InxGa1-xAs critical thickness with high In components was simulated by computer to get the theoretically In0.82Ga0.18As critical thickness. The In0.82Ga0.18As grown on InP （100） substrates was carried out by low pressure metalorganic chemical vapor deposition （LP-MOCVD）. The thickness of low temperature layer was grown below critical thickness, equal to the critical thickness, and higher than the critical thickness, respectively, then the In0.82Ga0.18As high temperature layer was grown in consistent growing conditions. The effect of critical thickness on In0.82Ga0.18As high temperature layer was analyzed.

关 键 词：Ga0.18As 金属有机化学气相淀积 临界厚度In0.82 

分 类 号：O471.1[理学—半导体物理]