InAlN/AlN/GaN HEMT器件特性研究  

Investigation on DC and RF Performance of InAlN/AlN/GaN HEMTs

作　　者：刘海琪[1] 周建军[1] 董逊[1] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2011年第2期120-123,共4页Research & Progress of SSE

摘　　要：通过利用MOCVD生长的高质量蓝宝石衬底InAlN/AlN/GaN异质结材料,获得了高的二维电子气面密度,其值为1.65×1013cm-2。通过该结构制备了0.15μm栅长InAlN/AlN/GaN HEMT器件,获得了相关的电学特性:最大电流密度为1.3 A/mm,峰值跨导为260 mS/mm,电流增益截止频率为65 GHz,最大振荡频率为85 GHz。对比于相应的AlGaN/AlN/GaN HEMT器件,InAlN/AlN/GaN HEMT器件由于具有高的二维电子气面密度和薄的势垒层厚度,其最大电流密度和峰值跨导特性有了很大的改善,同时频率特性也有显著提高。InAlN/AlN/GaN heterostructure grown by MOCVD on sapphire substrate was fabricated with a high 2-dimensional electron gas（2DEG） density of 1.65×1013 cm-2.The devices with a gate length of 0.15 μm were fabricated on the InAlN/AlN/GaN heterostructure.A maximum drain current density of 1.3 A/mm,a peak extrinsic transconductance of 260 mS/mm were obtained through DC measurement.For their microwave characteristics,a current gain cut-off frequency （fT） of 65 GHz and a maximum oscillation frequency（fmax） of 85 GHz were measured.Compared to conventional AlGaN/AlN/GaN HEMTs,the DC and RF performance of InAlN/AlN/GaN HEMTs are improved greatly due to the high 2DEG density and thin barrier layer.

关 键 词：铟铝氮/氮化镓 高电子迁移率晶体管 二维电子气 薄势垒层厚度 

分 类 号：TN325.3[电子电信—物理电子学] TN386