GaAs基共振遂穿二极管的材料结构研究  

The Material Structure Research of the GaAs-based Resonant Tunneling Diode

作　　者：王杰[1] 张斌珍[1] 刘君[1] 唐建军[1] 谭振新[1] 贾晓娟[1] 高杰[1] 

机构地区：[1]电子测试技术国家重点实验室仪器科学与动态测试教育部重点实验室中北大学,太原030051

出　　处：《固体电子学研究与进展》2011年第2期136-140,共5页Research & Progress of SSE

基　　金：国家自然基金重点资助项目(50730009)

摘　　要：用分子束外延技术在半绝缘GaAs衬底上生长了三种不同材料结构的RTD。主要针对阱结构进行了对比设计,然后对设计结构进行了常温下的I-V特性测试,测试结果中器件的PVCR值最高达到了6,VP降低到了0.41V。同时常温下测试了其中一种设计结构的敏感单元在四种不同发射极面积下的I-V特性曲线。最后对器件阱结构和发射极面积大小与器件直流特性的关系进行了分析总结,为设计性能更好的RTD结构提供了参考依据。RTDs of three different material structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy.We mainly proceed contrast design aim at well structure.Then tested the I-V character of the designed structure.In the test result,the PVCR of the device is up to 6,VP is reduced to 0.41 V.And we tested one of the designed structure＇s I-V curve under four different emitter area of sensitive cell,finally analyzed and summarized the relationship between the well structure of the device and emitter area of sensitive cell with the DC character of the device,which provided a reference for the better performance of the RTD structure design.

关 键 词：共振隧穿二极管 I-V特性 砷化镓 发射极 

分 类 号：TN313.3[电子电信—物理电子学] TN315.3