MEMS中硅湿法深槽刻蚀工艺的研究  

Study on Silicon Deep Wet Etching Technology for MEMS

作　　者：倪烨[1] 戴强[1] 张怀武[1] 钟智勇[1] 于奇[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《材料导报》2011年第8期5-7,共3页Materials Reports

基　　金：武器装备预研重点基金项目(9140A09022409DZ02)

摘　　要：针对硅基MEMS湿法深槽刻蚀技术的难点,在硅材料各向异性腐蚀特性的基础上探索了湿法工艺。对腐蚀液含量、温度、添加剂含量对刻蚀速率及表面粗糙度的影响,掩膜技术等进行了实验研究,优化得到了最佳刻蚀条件。应用该技术成功地刻蚀出深度高达330μm的深槽,为MEMS元器件的加工提供了一种参考方法。Aiming at the difficulties of silicon deep wet etching technology for MEMS, the wet technique on the basis of the anisotropy erosion of silicon was explored, and experimental research on the effect of the concentration, temperature of the etching solution and volume of additive on the etching rate, surface roughness and mask technique were carried out. In the end, the optimum condition of etching was achieved. A good 330μm deep groove is etched adopting this technique, which is promising for the processing of MEMS components.

关 键 词：湿法刻蚀 MEMS 深槽刻蚀 掩膜 

分 类 号：TN405[电子电信—微电子学与固体电子学]