采用P^+共同注入改进SI-GaAs Si^+注入层的电特性  

Improvement of Electric Properties of SI-GaAs Si^+Implanted Layer by P+ Co-Implantation

作　　者：陈堂胜[1] 罗晋生[2] 

机构地区：[1]南京电子器件研究所 [2]西安交通大学电子工程系

出　　处：《微电子学》1990年第1期1-5,共5页Microelectronics

摘　　要：在SI—GaAs Si^+注入层中共同注入P^+可以改进注入层的电特性。P^+的共同注入提高了注入层的激活率和平均霍耳迁移率。对于Si^+注入的剂量和能量分别为4×10^(12)cm^(-2)/30keV+5×10^(12)cm^(-2)/130keV的样品,得到了激活率为75～85％,平均霍耳迁移率为4600～4700cm^2/Vs的结果。另一方面,P^+注入改进了有源层与衬底的界面特性。肖特基势垒技术测量表明,P^+共同注入的样品表现出更好的迁移率分布。深能级瞬态谱(DLTS)测量表明,P^+共同注入降低了激活层中的深能级密度。Co-implatation of P+ into the SI-GaAs Si+ implanted layer can improve electric propeities of the implanted layer P+ co-implantation enhances and homogenizes the activation efficiency and the average Hall mobility. Activation effciency of 75 ～85% and Hall mobility of 4600～4700cm2/V·s have teen obtained for samples with Si+ implantation dose and energy of 4×lO12cm^(-2)/30keV+5×1012cm-2/-130k eV.Furthermore,P+ co-implantation improves properties of the interface between the active layer and substrate. Schottky barrier measurements showed a better mobility profile for samples with P+ co-implantation. DLTS analysis indicated a decrease in deep level densities for activated layers with P+ co-implantation.

关 键 词：离子注入 SI-GAAS SI 注入层 

分 类 号：TN305.3[电子电信—物理电子学]