三维掩膜硅各向异性腐蚀工艺释放微悬空结构  

Releasing of Micro Impending Structures Based on 3D Mask and Si-Based Anisotropic Etching Processes

作　　者：黄占喜[1,2,3] 吴亚明[1,2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所微系统技术国家重点实验室,上海200050 [2]中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室,上海200050 [3]中国科学院研究生院,北京100049

出　　处：《微纳电子技术》2011年第5期326-332,共7页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2008AA03Z406;2009AA03Z443);国家自然科学基金资助项目(60877066)

摘　　要：提出了一种新颖的基于三维掩膜的硅各向异性腐蚀工艺,即利用深反应离子刻蚀、湿法腐蚀等常规体硅刻蚀工艺和氧化、化学气相沉积(CVD)等薄膜工艺制作出具有三维结构的氧化硅(SiO2)或氮化硅(Si3N4)薄膜,以该三维薄膜作为掩膜进行各向异性腐蚀,该工艺可以应用于MEMS微悬空结构的制作。利用该工艺成功地在单片n-Si(100)衬底上完成了一种十字梁结构的释放,并对腐蚀的过程和工艺参数进行了研究。A novel silicon anisotropic etching process based on the 3D mask was proposed.Through the usual bulk silicon etching processes such as deep reactive ion etching,wet etching and film processes such as oxidation and chemical vapor deposition,the SiO2/Si3N4 films with 3D structures were fabricated for the silicon anisotropic etching.The process can be applied in the fabrication of MEMS micro impending structures.A cross-bar structure releasing was completed successfully on a single n-Si（100） wafer by the process and the etching process and processing parameters were studied.

关 键 词：微悬空结构释放 体硅工艺 三维掩膜 各向异性腐蚀 腐蚀模拟 

分 类 号：TH703[机械工程—仪器科学与技术]