退火时间对铝诱导非晶硅薄膜晶化过程的影响  

Effect of Annealing Time on Crystallization Process of Aluminum Induced Amorphous Silicon Films

作　　者：焦栋茂[1] 王新征[1] 李洪涛[1] 郭烈萍[1] 蒋百灵[1] 

机构地区：[1]西安理工大学材料科学与工程学院,西安710048

出　　处：《人工晶体学报》2011年第2期370-373,378,共5页Journal of Synthetic Crystals

基　　金：陕西省教育厅科学技术研究计划(09JK623)资助项目

摘　　要：基于铝诱导非晶硅薄膜固相晶化方法,利用直流磁控溅射离子镀技术制备了Al/Si/…Al/Si/glass周期性结构的薄膜。采用真空退火炉对Al/Si多层薄膜进行了500℃退火实验,通过透射电子显微镜(TEM)分析了不同退火时间下Al/Si多层薄膜截面形貌的变化规律,并结合扩散过程探讨了退火时间对铝诱导非晶硅薄膜晶化过程的影响机理。研究结果表明:在铝诱导非晶硅薄膜固相晶化过程中,在退火过程的初期,晶态硅薄膜的生长主要来源于因Al的存在而形成的硅初始晶核数量增加的贡献。随退火时间的延长,晶态硅薄膜的生长主要是依靠临界浓度线已推进区域中未参与形核的硅原子扩散至初始晶核位置并进行外延生长来实现的。经500℃退火1 h后,Al/Si薄膜的截面形貌中出现了沿Si(111)晶面生长的栾晶组织。Based on aluminum-induced solid-phase crystallization method of amorphous silicon thin film,the periodic structure of Al/Si…Al/Si/glass films were prepared by DC magnetron sputter ion plating technique.The Al/Si multilayer films were annealed for different time at 500 ℃ in vacuum annealing furnace,and the annealed films were analyzed by TEM to obtain the variation patterns of cross-section topography of the annealed films.The essential influence of annealing time on crystallization process of aluminum induced amorphous silicon films were discussed combined with diffusion process.The results show that： During the aluminum-induced solid-phase crystallization process of amorphous silicon thin film,the growth of crystalline silicon films mainly depends on increase in the number of Si initial crystalline nucleation formed by the presence of Al in the early stages of annealing process.With prolonged annealing time,the growth of crystalline silicon thin film was achieved by silicon atoms diffusion to the location of the initial crystalline nucleation and the epitaxial growth in the area of critical concentration line having been promoted.The cross-section topography of Al/Si thin film shows the twinning-crystalline structures grown along the Si（111） crystal plane after annealing for 1 h at 500 ℃.

关 键 词：退火时间 非晶硅薄膜 晶化 扩散 

分 类 号：O484[理学—固体物理]