射频反应磁控溅射制备ZnO薄膜的微结构及其光学性能  

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

作　　者：夏齐萍[1] 汪小小[1] 吕建国[1,2] 宋学萍[1] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院,合肥230039 [2]合肥师范学院物理与电子工程系,合肥230061

出　　处：《人工晶体学报》2011年第2期430-434,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50872001;51072001);教育部博士点专项基金(20060357003);安徽省人才专项基金(2004Z029);安徽高校省级自然科学研究重点项目(KJ2010A284)

摘　　要：采用射频反应磁控溅射技术在石英和Si衬底上制备了高度c轴择优取向的ZnO薄膜,样品的氧氩流量比分别为10:40,20:40,30:40,40:40。利用X射线衍射仪、表面轮廓仪、原子力显微镜和紫外-可见分光光度计研究了样品的微结构与光学特性。研究表明:氧氩流量比为30:40的样品结晶质量最好。所制备的ZnO薄膜的可见光平均透射率均大于87%。随着氧氩流量比的增大,薄膜的透射率呈非单调变化,氧氩流量比为30:40的样品在可见光范围的平均透射率可达93%。光学带隙随着氧氩流量比的增大,先增大后减小。与块材ZnO的带隙(3.37 eV)相比,ZnO薄膜的带隙均变窄。The c-axis preferred orientation ZnO films was deposited on quartz and Si substrates using RF reactive magnetron sputtering.The O2∶Ar flow ratio was 10∶40,20∶40,30∶40 and 40∶40 during the magnetron sputtering process.The microstructure and optical properties of ZnO films were investigated by X-ray diffraction,stylus profilometer,atomic force microscope and ultraviolet-visible spectrum.The results indicated that ZnO films prepared at 30∶40 had the best crystal quality.The average transmission of ZnO thin films are above 87%.As the O2∶Ar ratio increasing,the transmission of ZnO thin films change non-monotonically and reach a maximum of above 93% at 30∶40.The optical band gap of ZnO films first increases and then decreases as O2∶Ar ratio increasing.Compared with the optical band gap（3.37 eV） of buck ZnO,the band gap of all ZnO films become narrow.

关 键 词：射频反应磁控溅射 ZNO薄膜 微结构 光学性能 

分 类 号：O484[理学—固体物理]