深亚微米工艺EEPROM单元加固设计及辐照性能  

EEPROM cell hardness design and radiation characteristics in deep submicron process

作　　者：周昕杰[1,2] 李蕾蕾[3,2] 徐睿[2] 于宗光[2] 

机构地区：[1]东南大学电子科学与工程学院,南京210096 [2]中国电子科技集团第五十八研究所,无锡214035 [3]西安电子科技大学微电子学院,西安710071

出　　处：《东南大学学报（自然科学版）》2011年第3期518-521,共4页Journal of Southeast University：Natural Science Edition

基　　金：国家科技重大专项资助项目(2008ZX01XXX)

摘　　要：当普通EEPROM单元在太空中应用时,会受到辐照效应的影响,导致单元可靠性降低,寿命缩短,为此,基于0.18μm工艺,设计出一种新型抗辐照EEPROM单元.新单元采用环形栅和场区隔离管加固结构.加固后,单元面积为9.56μm2,抗总剂量效应能力大于1 500 Gy,抗辐照能力明显优于普通结构.为明确失效机制,基于新单元结构在辐照条件下的阈值退化曲线,分析了辐照效应对存储单元的影响,并与普通单元的辐照效应相比较.结果表明:总剂量效应引起的边缘寄生管源/漏端漏电及场氧下漏电是深亚微米工艺EEPROM失效的主要机制.新单元针对失效机制的加固设计,提高了抗辐照能力和可靠性.该设计为满足太空应用中抗辐照存储器的需要,提供了良好的基础.The general EEPROM（electrically erasable programmable read-only memory） cell is affected by radiation effect when used in space,which leads to reduction of the cell＇s reliability and life.Therefore,a new EEPROM cell is designed in 0.18 μm process,which uses annular gate and field oxide isolated transistor for radiation hardness.After reinforcement,the area of cell is 9.56 μm2,and the ability of total ionizing dose effect resistance is above 1 500 Gy.These characteristics of anti-radiation are better than those of the general cell.Based on the degeneration of threshold voltage in radiation condition,the radiation effects of cell are analyzed and compared with the general cell for determining the failure mechanism.The results show that the electricity leakages of source/drain in the parasitic edge transistor and under field oxide caused by the total ionizing dose effect are the main failure mechanisms of EEPROM in the deep submicron process.The radiation hardness designs against these failure mechanisms enhance the ability of anti-radiation and reliability of the cell.This work provides a good basis for meeting the need of memory in space application.

关 键 词：总剂量效应 EEPROM 抗辐照加固 

分 类 号：TN303[电子电信—物理电子学]