pLEDMOS导通电阻及阈值电压的热载流子退化  

On-resistance and threshold voltage hot-carrier degradation of pLEDMOS

作　　者：郑维山[1,2] 孙虎[3] 刘斯扬[3] 孙伟锋[3] 

机构地区：[1]南京大学电子科学与工程学院,南京210093 [2]南京大学江苏省光电信息功能材料重点实验室,南京210093 [3]东南大学国家ASIC系统工程技术研究中心,南京210096

出　　处：《东南大学学报（自然科学版）》2011年第3期522-525,共4页Journal of Southeast University：Natural Science Edition

基　　金：国家高技术研究发展计划(863计划)资助项目(2008AA01Z135);国家自然科学基金资助项目(60876017;61006018);江苏省科技支撑计划资助项目(BE2009143)

摘　　要：研究了不同漂移区长度及不同栅场极板长度的厚栅氧化层pLEDMOS器件由热载流子效应导致的导通电阻及阈值电压的退化现象及机理.实验结果表明,增加漂移区长度能改善器件的导通电阻的退化,但加速了阈值电压的退化;增加栅场极板长度可以同时改善导通电阻和阈值电压的退化.借助TCAD仿真软件,模拟分析了不同漂移区长度及不同栅场极板长度的pLEDMOS器件的离子产生率和纵向电场,模拟结果解释了各种退化现象的机理,同时表明碰撞电离率和纵向电场的优化是改善器件参数退化的有效手段.The influence of the different length of the drift region and the field plate upon hot-carrier-Induced on-resistance（Ron） and threshold voltage（Vth） degradation in p-type lateral extended drain MOS（pLEDMOS） transistor with thick gate oxide has been investigated.It is concluded that increasing the length of drift region can reduce the Ron degradation but enhance the Vth degradation.However,increasing the length of field plate can reduce the degradation of both Ron and Vth.The impact ionization rate and perpendicular electronic field of pLEDMOS with the different length of the drift region and the field plate were simulated based on TCAD,the results of which can explain the mechanism of the degradation of pLEDMOS.It is also shown that the optimization of the impact ionization rate and perpendicular electronic field is an effective way to reduce the degradation of pLEDMOS.

关 键 词：pLEDMOS 热载流子注入 导通电阻 阈值电压 退化 

分 类 号：X703[环境科学与工程—环境工程]