铒离子注入碳化硅的射程和退火行为研究  

Range and annealing behavior of Er ions implanted in SiC

作　　者：秦希峰[1] 梁毅[1] 王凤翔[1] 李双[1] 付刚[1] 季艳菊[1] 

机构地区：[1]山东建筑大学理学院,济南250101

出　　处：《物理学报》2011年第6期483-487,共5页Acta Physica Sinica

基　　金：山东建筑大学校内基金(批准号:XN070109);山东省自然科学基金(批准号:ZR2009FM031)资助的课题~~

摘　　要：用300—500keV能量的铒(Er)离子注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×1015cm-2的Er离子注入6H-SiC晶体的平均投影射程Rp和射程离散ΔRp,将测出的实验值和TRIM软件得到的理论模拟值进行了比较,发现Rp的实验值与理论值符合较好,ΔRp的实验值和理论值差别大一些.结果表明,注入剂量一定时,注入能量越高,晶格损伤程度越高.1400℃的高温退火,可以实现6H-SiC的完美再晶化,但伴随着产生了Er原子向表面的外逸出.Er ions with an energy range of 300—500 keV are implanted in 6H-SiC crystal samples separately.The values of mean projected range Rp and range straggling ΔRp of Er ions with a dose of 5×10^15 cm^-2 implanted in 6H-SiC crystal are measured by Rutherford backscattering technique.The measured data are compared with TRIM code prediction.It is seen that the experimental Rp values are in good agreement with theoretical values,but for ΔRp values there are bigger differences between the experimental data and the theoretical values.Research shows that the higher the implanting energy,the heavier the damage is.Perfect recrystallization of 6H-SiC is achieved by annealing at 1400 ℃,however it is accompanied by the segregation of Er ions to the surface.

关 键 词：离子注入 投影射程和射程离散 退火行为 卢瑟福背散射技术 

分 类 号：O483[理学—固体物理]