薄膜厚度对ZnO:Ti透明导电薄膜光电性能的影响  

THICKNESS DEPENDENCE OF STRUCTURAL,OPTICAL AND ELECTRICAL PROPERTIES OF ZnO:Ti FILMS PREPARED ON WATER-COOLED GLASS SUBSTRATE

作　　者：刘汉法[1] 张化福[1] 袁玉珍[1] 袁长坤[1] 类成新[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《太阳能学报》2011年第5期680-683,共4页Acta Energiae Solaris Sinica

基　　金：山东省自然科学基金(ZR2009GL015)

摘　　要：利用直流磁控溅射法在室温水冷玻璃衬底上制备出可见光透过率高、电阻率低的掺钛氧化锌(ZnO∶Ti)透明导电薄膜。SEM和XRD研究结果表明,ZnO∶Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。讨论了薄膜厚度对掺钛氧化锌透明导电薄膜光学、电学性能的影响。当薄膜厚度为835nm时,薄膜具有最低电阻率3.34×10-4Ω.cm。所制备薄膜附着性能良好,在波长为500～800nm的可见光中平均透过率均超过91%,ZnO∶Ti薄膜可用作薄膜太阳电池和液晶显示器的透明电极。Transparent conducting Titanium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled substrates by direct current magnetron sputtering at room temperature. Micro-structural, morphological and optic-electrical properties of ZnO：Ti films were investigated. Experimental results showed that the thickness plays an important role on the microstructure and electrical resistivity of ZnO ： Ti films. All the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis. The crystallite size increases and the electrical resistivity decreases when the thickness increases from 206nm to 835nm. When the thickness is 835nm, it was obtained that the lowest resistivity is 3.34×10^-4Ω·cm. The crystallite size decreases and the electrical resistivity increases when the thickness increases from 835um to 1078nm. All the films present a high transmittance of above 91% in the visible range. ZnO：Ti films with high transparency and relatively low resistivity deposited on glass substrates at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal displays.

关 键 词：ZnO:Ti薄膜 透明导电薄膜 磁控溅射 光电性能 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055