检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:储汉奇[1] 李合琴[1] 都智[1] 聂竹华[1]
机构地区:[1]合肥工业大学材料科学与工程学院,安徽合肥230009
出 处:《真空》2011年第3期67-71,共5页Vacuum
基 金:国家"973"项目(2008CB717802);安徽省自然科学基金(090414182);安徽省高校自然科学基金(KJ2009A091)
摘 要:采用射频反应磁控溅射法在中国低活化马氏体(CLAM)不锈钢表面制备了单层A12O3、SiC、W薄膜以及SiC/A12O3、W/A12O3双层膜。对所制备的薄膜进行了XRD结构分析、AFM表面形貌测试和显微硬度测试。结果表明:单层SiC薄膜表面出现了部分脱落,而SiC/A12O3双层膜表面完整光滑。W/A12O3双层薄膜表面平整光滑,均方根粗糙度为4.28 nm。W单层薄膜和W/A12O3双层薄膜经氩气中800℃退火2 h后硬度最高,分别达到了34.4 GPa和31.3 GPa。A12O3,SiC,W thin films and SiC/A12O3,W/A12O3 bilayer films were prepared by reactive radio-frequency(RF) magnetron sputtering on China low activation martensitic(CLAM) steel.The phase composition,surface morphology and micro hardness of the films were detected by X ray diffractometer(XRD),atomic force microscopy(AFM) and micro hardness meter.The results showed that,the SiC thin film peeled off to some extent,while the SiC/A12O3 bilayer films are very tight and smooth.The W/A12O3 bilayer films are also very smooth whose root-mean-square roughness is 4.28nm.W thin film and W/A12O3 bilayer films have the highest hardness after annealed for 2h in Ar atmosphere at 800℃,which are 34.4GPa and 31.3GPa respectively.
关 键 词:射频反应磁控溅射 CLAM钢 A12O3薄膜 SIC薄膜 W薄膜 SiC/A12O3双层膜 W/A12O3双层膜 显微硬度
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.112