衬底温度对AlN薄膜结构及电阻率的影响  

Effect of Substrate Temperature on Structure and Resistivity of AlN Thin Films

作　　者：薛守迪[1] 杨成韬[1] 解群眺[1] 毛世平[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]中国电子科技集团公司第26研究所,重庆400060

出　　处：《压电与声光》2011年第3期475-478,共4页Piezoelectrics & Acoustooptics

基　　金："九七三"计划基金资助项目(51363Z04)

摘　　要：采用直流反应磁控溅射法在Si(111)基片上制备了AlN薄膜,利用XRD、原子力显微镜(AFM)、电流-电压(I-V)测试仪等对不同衬底下制备薄膜的结构、形貌及电阻率等进行了分析表征。结果表明:随着衬底温度的升高,晶粒逐渐长大,AlN(002)择优取向明显改善,600℃达到最佳。一定范围内提高温度使晶粒均匀、致密,有利于改善表面粗糙情况和提高电阻率,550℃时表面粗糙度达到最低(2.8 nm)且有最大的电阻率(3.35×1012Ω.cm);同时薄膜应力随温度升高有增大趋势。The c-axis oriented AlN thin film has been manufactured by the DC reactive magnetron sputtering technique on Si（111） substrates at different substrate temperature.The influence of the substrate temperature on the AlN thin films＇ microstructure and resistivity is studied by XRD 、AFM and I-V tester.The results showed that with the increase of substrate temperature the crystallization degree and the grain size increased,the preferred crystalline orientation and the orientation consistency became better;the crystalline orientation has been the optimal at 600 ℃.The crystal grains became uniform and dense when the substrate temperature was increased within a certain range,the film surface was improved and its resistivity was increased.The minimum surface roughness（2.8 nm） and the maximum resistivity（3.35×1012 Ω·cm） was achieved in 550 ℃.The film stress increased when the temperature was increased.

关 键 词：AIN薄膜 衬底温度 XRD 原子力显微镜(AFM) 

分 类 号：TN65[电子电信—电路与系统]