CIGS薄膜太阳能电池用Mo背电极的制备与结构性能研究  

Study of Structure and Properties of Mo Thin Films Prepared by Magnetron Sputtering

作　　者：赵志明[1] 丁宇[1] 曹智睿[1] 田亚萍[1] 屈直[1] 张国君[1] 蒋百灵[1] 

机构地区：[1]西安理工大学材料学院,西安710048

出　　处：《材料导报》2011年第12期74-77,共4页Materials Reports

基　　金：陕西省自然科学基金(101-221007);陕西省重点学科建设专项资金

摘　　要：利用磁控溅射技术在Soda-lime玻璃衬底上沉积CIGS薄膜太阳能电池用金属Mo背电极薄膜,并研究了Mo靶功率、基片脉冲宽度以及预清洗时间对Mo薄膜的相结构、形貌及电阻率的影响。结果表明,沉积的Mo薄膜均沿(110)晶面呈柱状择优生长;增大Mo靶溅射功率可以促进薄膜晶粒长大、提高薄膜的致密性、降低电阻率;合适的基片脉冲电压脉宽促进了晶核的形成、长大并有助于沉积过程中Mo晶粒长大,进而降低薄膜电阻率;通过延长预清洗时间可获得致密性好、电阻率低的Mo薄膜,所获得的Mo薄膜最低电阻率为3.5×10-5Ω.cm。Mo thin films were deposited by DC magnetron sputtering technique onto soda-lime glass substrates at room temperature. The influence of the deposition parameters on the structure, morphology and resistivity of the Mo thin films has been studied. The structure and electric properties and morphology of Mo thin films were analyzed by XRD, SEM and four point probing method, respectively. As-grown Mo thin films have preferred remarkably along the （110） orientation and shown columnar morphology. By varying pre-cleaning time and pulse width during ion cleaning, about 1μm thick Mo thin films have been fabricated with both low resistivity（3.5 ×10^-5Ω·cm） and good adhesion.

关 键 词：MO薄膜 磁控溅射 XRD SEM 

分 类 号：O484.1[理学—固体物理]