SOI LIGBT抗闩锁效应的研究与进展  

Progress in Research of Anti-Latch-Up Effect of SOI LIGBT

作　　者：苏步春[1] 张海鹏[1,2,3] 王德君[2] 

机构地区：[1]杭州电子科技大学电子信息学院射频电路与系统教育部重点实验室,杭州310018 [2]大连理工大学电子信息与电气工程学部电子科学与技术学院,辽宁大连116024 [3]杭州汉安半导体有限公司,杭州310018

出　　处：《微电子学》2011年第3期461-464,478,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60306003);浙江省科技计划资助项目(2009C21G2040066)

摘　　要：概述了绝缘层上硅横向绝缘栅双极晶体管(SOI LIGBT)抗闩锁结构的改进历程,介绍了从早期改进的p阱深p+欧姆接触SOI LIGBT结构到后来的中间阴极SOI LIGBT、埋栅SOILIGBT、双沟道SOI LIGBT、槽栅阳极短路射频SOI LIGBT等改进结构;阐述了一些结构在抗闩锁方面的改善情况,总结指出抑制闩锁效应发生的根本出发点是通过降低p基区电阻的阻值或减小流过p基区电阻的电流来削弱或者切断寄生双极晶体管之间的正反馈耦合。Research of anti-latch-up structure of SOI LIGBT and its improvement from deep p＋ sinker SOI LIGBT to vertical gate RF SOI LIGBT with a shorted-anode were described in general.Some improved anti-latch-up structure of SOI LIGBT were presented in detail,including buried gate SOI LIGBT,dual-gate SOI LIGBT and vertical gate RF SOI LIGBT with a shorted-anode.Finally,it was pointed out that the basic method to restrain latch-up effect is to alleviate or remove positive feedback coupling between parasitic bipolar transistors by reducing p-base resistance or decreasing current flowing through p-base resistor.

关 键 词：绝缘层上硅 横向绝缘栅双极晶体管 闩锁效应 

分 类 号：TN323.4[电子电信—物理电子学]